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  march 2017 docid025254 rev 4 1 / 21 this is information on a product in full production. www.st.com stb28n60m2, STI28N60M2, stp28n60m2, stw28n60m2 n - channel 600 v, 0.135 typ., 22 a mdmesh? m2 power mosfets in d2pak, i2pak, to - 220 and to - 247 datasheet - production data figure 1 : internal schematic diagram features order code v ds @ t jmax r ds(on) max. i d stb28n60m2 650 v 0.150 ? 22 a STI28N60M2 stp28n60m2 stw28n60m2 ? extremely low gate charge ? excellent output capacitance (c oss ) profile ? 100% avalanche tested ? zener - protected applica tions ? switching applications ? lcc converters, resonant converters description these d evices are n - channel power mosfets developed using mdmesh? m2 technology. thanks to their strip layout and improved vertical structure, these devices exhibit low on - resistance and optimized switching characteristics, rendering them suitable for the most de manding high efficiency converters. table 1: device summary order code marking package packing stb28n60m2 28n60m2 d2pak tape and reel STI28N60M2 i2pak tube stp28n60m2 to - 220 stw28n60m2 to - 247 t ab 1 d ( ) ( 2 ) g s 3 ( ) am15572v1
contents stb28n60m2, STI28N60M2, stp28n60m2, stw28n60m2 2 / 21 docid025254 rev 4 contents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteristics (curves) ................................ ...................... 6 3 test circuits ................................ ................................ ..................... 9 4 package information ................................ ................................ ..... 10 4.1 d2pak package information ................................ ............................ 10 4.2 d2pak packing information ................................ ............................. 13 4 .3 i2pak package information ................................ ............................. 15 4.4 to - 220 type a package information ................................ ................ 16 4.5 to - 247 package information ................................ ........................... 18 5 revision history ................................ ................................ ............ 20
stb28n60m2, STI28N60M2, stp28n60m2, stw28n60m2 electrical ratings docid025254 rev 4 3 / 21 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v gs gate - source voltage 25 v i d drain current (continuous) at t c = 25 c 22 a i d drain current (continuous) at t c = 100 c 14 a i dm (1) drain current (pulsed) 88 a p tot total dissipation at t c = 25 c 170 w dv/dt (2) peak diode recovery voltage slope 15 v/ns dv/dt (3) mosfet dv/dt ruggedness 50 v/ns t stg storage temperature range - 55 to 150 c t j o p erating junction temperature ran g e notes: (1) pulse width limited by safe operating area. (2) i sd 22 a, di/dt 400 a/s; v ds(peak) < v (br)dss , v dd = 400 v. (3) v ds 480 v table 3: thermal data symbol parameter value unit d2pak i2pak to - 220 to - 247 r thj - case thermal resistance jun ction - case max 0.74 c/w r thj - pcb thermal resistance junction - pcb max (1) 30 c/w r thj - amb thermal resistance junction - ambient max 62.5 62.5 50 c/w notes: (1) when mounted on 1 inch2 fr - 4, 2 oz copper board. table 4: avalanche characteristics symbol parameter value unit i ar avalanche current, repetetive or not repetetive (pulse width limited by t jmax ) 3.6 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar ; v dd = 50 v) 350 mj
electrical characteristics stb28n60m2, STI28N60M2, stp28n60m2, stw28n60m2 4 / 21 docid025254 rev 4 2 electrical characte ristics t c = 25 c unless otherwise specified. table 5: on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown volta ge v gs = 0 v, i d = 1 ma 600 v i dss zero gate voltage drain current v gs = 0 v, v ds = 600 v 1 a v gs = 0 v, v ds = 600 v, t c = 125 c (1) 100 a i gss gate - body leakage current v ds = 0 v, v gs = 25 v 10 a v gs(th ) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 11 a 0.135 0.150 ? notes: (1) defined by design, not subject to production test. table 6: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 v - 1440 - pf c oss output capacitance - 70 - pf c rss reverse transfer capacitance - 2 - pf c oss eq. (1) equivalent output capacitance v ds = 0 to 48 0 v, v gs = 0 v - 104 - pf r g intrinsic gate resistance f = 1 mhz open drain - 5.5 - ? q g total gate charge v dd = 480 v, i d = 22 a, v gs = 0 to 10 v (see figure 17: "test circuit for gate charge behavior" ) - 36 - nc q gs gate - source charge - 7.2 - nc q gd gate - drain charge - 16 - nc notes: (1) c oss eq. i s defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80 % v dss . table 7: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = 300 v, i d = 11 a, r g = 4.7 , v gs = 10 v (see figure 16: "test circuit for resistive load switching times" and figure 21: "switching time waveform" ) - 14.5 - ns t r rise time - 7.2 - ns t d(off) turn - off - dela y time - 100 - ns t f fall time - 8 - ns
stb28n60m2, STI28N60M2, stp28n60m2, stw28n60m2 electrical characteristics docid025254 rev 4 5 / 21 table 8: source drain diode symbol parameter test conditions min. typ. max. unit i sd source - drain current - 22 a i sdm (1) source - drain current (pulsed) - 88 a v sd (2) forward on voltage v gs = 0 v, i sd = 22 a - 1.6 v t rr reverse recovery time i sd = 22 a, di/dt = 100 a/s, v dd = 60 v (see figure 21: "switching time waveform" ) - 350 ns q rr reverse recovery charge - 4.7 c i rrm reverse recovery current - 27 a t rr reverse recovery time i sd = 22 a, di/dt = 100 a/s, v dd = 60 v, t j = 150 c (see figure 21: "switching time waveform" ) - 451 ns q rr reverse recovery charge - 6.5 c i rrm reverse recovery current - 29 a notes: (1) pulse width is limited by safe operating area. (2) pulsed: pulse duration = 300 s, duty cycle 1.5 %.
electrical characteristics stb28n60m2, STI28N60M2, stp28n60m2, stw28n60m2 6 / 21 docid025254 rev 4 2.1 electrical characteristics (curves) figure 2 : safe operating area for d2pak, to - 220 and i2pak figure 3 : thermal impedance for d2pak, to - 220 and i2pak figure 4 : safe operating area for to - 247 figure 5 : thermal impedance for to - 247 figure 6 : output characteristics figure 7 : transfer characteristics
stb28n60m2, STI28N60M2, stp28n60m2, stw28n60m2 electrical characteristics docid025254 rev 4 7 / 21 figure 8 : g ate charge vs gate - source voltage figure 9 : static drain - source on - resistance figure 10 : capacitance variations figure 11 : output capacitance stored energy figure 12 : normalized gate threshold voltage vs temperature figure 13 : normalized on - resistance vs temperature
electrical characteristics stb28n60m2, STI28N60M2, stp28n60m2, stw28n60m2 8 / 21 docid025254 rev 4 figure 14 : normalized vds vs temperature figure 15 : source - drain diode forward characteristics
stb28n60m2, STI28N60M2, stp28n60m2, stw28n60m2 test circuits docid025254 rev 4 9 / 21 3 test circuits figure 16 : test circuit for resistive load switching times figure 17 : test circuit for gate charge behavior figure 18 : test circuit for inductive load switching and diode recovery times figure 19 : unclamped inductive load test circuit figure 20 : unclamped inductive waveform figure 21 : switching time waveform
package information stb28n60m2, STI28N60M2, stp28n60m2, stw28n60m2 10 / 21 docid025254 rev 4 4 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. 4.1 d2pak package information figure 22 : d2pak (to - 263) type a package outline
stb28n60m2, STI28N60M2, stp28n60m2, stw28n60m2 package information docid025254 rev 4 11 / 21 table 9: d2pak (to - 263) type a package mechanical data dim. mm min. typ. max. a 4.40 4.60 a1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 d 8.95 9.35 d1 7.50 7.75 8.00 d2 1.10 1.30 1.50 e 10.00 10.40 e1 8.50 8.70 8.90 e2 6.85 7.05 7.25 e 2.54 e1 4.88 5.28 h 15.00 15.85 j1 2.49 2.69 l 2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r 0.40 v2 0 8
package informat ion stb28n60m2, STI28N60M2, stp28n60m2, stw28n60m2 12 / 21 docid025254 rev 4 figure 23 : d2pak (to - 263) type a recommended footprint (dimensions are in mm)
stb28n60m2, STI28N60M2, stp28n60m2, stw28n60m2 package information docid025254 rev 4 13 / 21 4.2 d2pak packing information figure 24 : d2pak type a tape outline
package information stb28n60m2, STI28N60M2, stp28n60m2, stw28n60m2 14 / 21 docid025254 rev 4 figure 25 : d2pak type a reel outline table 10: d2pak type a tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. m ax. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base quantity 1000 p2 1.9 2.1 bulk quantity 1000 r 50 t 0.25 0.35 w 23.7 24.3
stb28n60m2, STI28N60M2, stp28n60m2, stw28n60m2 package information docid025254 rev 4 15 / 21 4.3 i2pak package information figure 26 : i2pak package outline table 11: i2pak package mechanical data dim. mm min. typ. max. a 4.40 - 4.60 a1 2.40 - 2.72 b 0.61 - 0.88 b1 1.14 - 1.70 c 0.49 - 0.70 c2 1.23 - 1.32 d 8.95 - 9.35 e 2.40 - 2.70 e1 4.95 - 5.15 e 10 - 10.40 l 13 - 14 l1 3.50 - 3.93 l2 1.27 - 1.40
package information stb28n60m2, STI28N60M2, stp28n60m2, stw28n60m2 16 / 21 docid025254 rev 4 4.4 to - 220 type a package information figure 27 : to - 220 type a package outline
stb28n60m2, STI28N60M2, stp28n60m2, stw28n60m2 package information docid025254 rev 4 17 / 21 table 12: to - 220 type a mechanical data dim. mm min. typ. max. a 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 d 15.25 15.75 d1 1.27 e 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 f 1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l 13.00 14.00 l1 3.50 3.93 l20 16.40 l30 28.90 ?p 3.75 3.85 q 2.65 2.95
package information stb28n60m2, STI28N60M2, stp28n60m2, stw28n60m2 18 / 21 docid025254 rev 4 4.5 to - 247 package information figure 28 : to - 247 package outline 0075325_8
stb28n60m2, STI28N60M2, stp28n60m2, stw28n60m2 package information docid025254 rev 4 19 / 21 table 13: to - 247 package mechanical data dim. mm min. typ. max. a 4.85 5.15 a1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15. 75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ?p 3.55 3.65 ?r 4.50 5.50 s 5.30 5.50 5.70
revision history stb28n60m2, STI28N60M2, stp28n60m2, stw28n60m2 20 / 21 docid025254 rev 4 5 revision history table 14: document revision history date revision changes 13 - sep - 2013 1 first release. 29 - jan - 2014 2 C modified: title, id value and features in cover page C modified: id, idm and ptot values in table 2 C modified: note 2 C modified: rthj - case value in table 3 C modified: the entire typical va lues in table 4, 6, 7 and 8 C modified: rds(on) typical value in table 5 C modified: figure 9 and 10 C added: section 4: package information C minor text changes 09 - feb - 2015 3 C updated title and description C updated table 2.: absolute maximum ratings an d table 4.: avalanche characteristics C updated figure 5.: thermal impedance for to - 247 and figure 6.: output characteristics C updated 4: package information C minor text changes. 14 - mar - 2017 4 added part number STI28N60M2. updated title, silhouette, fea tures and table 1: "device summary" in cover page. updated table 3: "thermal data" and section 4: "package information" . minor text changes.
stb28n60m2, STI28N60M2, stp28n60m2, stw28n60m2 docid025254 rev 4 21 / 21 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements t o st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or de r acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for applicati on assistance or the design of purchasers products. no license, express or implied, to any intellectual pr operty right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st f or such product. st and the st logo are trademarks of st. all other product or service na mes are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2017 stmicroelectronics C all rights reserved


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